BSZ16DN25NS3GATMA1

MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3

 

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Description

Description

BSZ16DN25NS3GATMA1

Manufacturer: Infineon Technologies AG

Manufacturer Product Number: BSZ16DN25NS3GATMA1

Product Technical Specifications
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.95
SVHC Yes
SVHC Exceeds Threshold Yes
Automotive No
PPAP No
Product Category Power MOSFET
Configuration Single Quad Drain Triple Source
Process Technology OptiMOS
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 250
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 10.9
Maximum Drain Source Resistance (mOhm) 165@10V
Typical Gate Charge @ Vgs (nC) 8.6@10V
Typical Gate Charge @ 10V (nC) 8.6
Typical Input Capacitance @ Vds (pF) 690@100V
Maximum Power Dissipation (mW) 62500
Typical Fall Time (ns) 4
Typical Rise Time (ns) 4
Typical Turn-Off Delay Time (ns) 11
Typical Turn-On Delay Time (ns) 6
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Supplier Package TSDSON EP
Pin Count 8
Standard Package Name SON
Mounting Surface Mount
Package Height 1
Package Length 3.3
Package Width 3.3
PCB changed 8
Lead Shape No Lead