TK20E60U,S1X(S

MOSFET N-Ch MOS 20A 600V 190W 1470pF 0.19

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Description

Description

TK20E60U,S1X(S

Mfr.:Toshiba

Mfr. #: TK20E60U,S1X(S

Product Technical Specifications
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Part Status Obsolete
HTS 8541.29.00.95
Automotive No
PPAP No
Product Category Power MOSFET
Material Si
Configuration Single
Process Technology DTMOSII
Channel Mode Enhancement
Channel Type N
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±30
Maximum Gate Threshold Voltage (V) 5
Maximum Continuous Drain Current (A) 20
Maximum Gate Source Leakage Current (nA) 1000
Maximum IDSS (uA) 100
Maximum Drain Source Resistance (mOhm) 190@10V
Typical Gate Charge @ Vgs (nC) 27@10V
Typical Gate Charge @ 10V (nC) 27
Typical Input Capacitance @ Vds (pF) 1470@10V
Maximum Power Dissipation (mW) 190000
Typical Fall Time (ns) 12
Typical Rise Time (ns) 40
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Supplier Package TO-220
Pin Count 3
Mounting Through Hole
Package Height 8.59
Package Length 10.16
Package Width 4.45
PCB changed 3
Tab Tab