Description
TPH1400ANH,L1Q(M
Manufacturer Product Number: TPH1400ANH,L1Q(M
Manufacturer: Toshiba Semiconductor and Storage
Product Technical Specifications | |
EU RoHS | Compliant |
ECCN (US) | EAR99 |
Part Status | Active |
SVHC | Yes |
SVHC Exceeds Threshold | Yes |
Automotive | No |
PPAP | No |
Product Category | Power MOSFET |
Material | Si |
Configuration | Single Quad Drain Triple Source |
Process Technology | U-MOS VIII-H |
Channel Mode | Enhancement |
Channel Type | N |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Gate Threshold Voltage (V) | 4 |
Maximum Continuous Drain Current (A) | 42 |
Maximum Gate Source Leakage Current (nA) | 100 |
Maximum IDSS (uA) | 10 |
Maximum Drain Source Resistance (mOhm) | 13.6@10V |
Typical Gate Charge @ Vgs (nC) | 22@10V |
Typical Gate Charge @ 10V (nC) | 22 |
Typical Input Capacitance @ Vds (pF) | 1440@50V |
Maximum Power Dissipation (mW) | 2800 |
Typical Fall Time (ns) | 6.5 |
Typical Rise Time (ns) | 5.6 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Packaging | Tape and Reel |
Supplier Package | SOP Advance |
Pin Count | 8 |
Standard Package Name | SOP |
Mounting | Surface Mount |
Package Height | 0.95 |
Package Length | 5 |
Package Width | 5 |
PCB changed | 8 |